Eigenschaften

Crystallographic, Physical and Electronic Properties of SiC*

Property 4H-SiC 6H-SiC
Lattice Parameters a = 0.3076 nm
c = 1.0053 nm
a = 0.3073 nm
c = 1.5117 nm
Stacking Sequence 1 hexagonal (h)
1 cubic (k)
1 hexagonal (h)
2 cubic (k1,k2)
Mohs Hardness ~9 ~9
Density 3.21*10+03 kg/m3 3.21*10+03 kg/m3
Dielectric Constant 9.7 9.7
Thermal Expansion Coefficient 4-5*10-06 /K 4-5*10-06 /K
Refractive Index
(for lambda = 467 nm)
no = 2.719
ne = 2.777
no = 2.707
ne = 2.755
Thermal Conductivity 370 W/mK 490 W/mK
Bandgap 3.27 eV 3.02 eV
Break-Down Electrical Field 2 - 4 *10+08 V/m 2 - 4 *10+08 V/m
Saturation Drift Velocity 2.0*10+05 m/s 2.0*10+05 m/s


* data as reported e.g. in Landolt-Boernstein (Springer Verlag) and G.L. Harris (INSPEC).